Abstract:
Le travail presente dans ce manuscrit s fest inscrit dans le des recherches actuelles sur l famelioration
des cellules solaires, en s finteressant particulierement aux materiaux III-V. L falliage InGaN, grace a
sa large couverture spectrale et ses bonnes proprietes electriques se reveles promoteur pour les
applications photovoltaiques.
L fobjectif de notre travail est la simulation et l foptimisation d fune cellule solaire tandem a base de
materiaux III-N. L fetude, realisee avec le logiciel SCAPS-1D, porte sur les jonctions simples
ITO/GaN/In....Ga....N et In...Ga...N/InN, puis la jonction double, en analysant l fimpact de
l fepaisseur et du dopage sur les performances electriques de la cellule.
Les simulations ont permis d fidentifier les configurations optimales des couches, ameliorant
significativement le rendement global. La cellule tandem optimisee a atteint un rendement (.) de
42,281 %, avec une tension en circuit ouvert (Voc) de 1.3189 V, un courant de court-circuit (Jsc) de
34.498 mA/cm2 et un facteur de forme (FF) de 92.926 %.Ces resultats confirment le fort potentiel des
structures tandem III-N pour le photovoltaique a haut rendement
The work presented in this manuscript is part of ongoing research aimed at improving solar cell
performance, with a particular focus on III-V materials. The InGaN alloy, due to its broad spectral
coverage and excellent electrical properties, proves to be a promising candidate for photovoltaic
applications.
The objective of this study is the simulation and optimization of a tandem solar cell based on IIInitride
materials. The analysis, carried out using the SCAPS-1D software, focuses on the singlejunction
structures ITO/GaN/In....Ga....N and In...Ga...N/InN, followed by the double-junction
configuration.The influence of layer thickness and doping on the electrical performance of the cell
was thoroughly examined. .
The simulations enabled the identification of optimal layer configurations, resulting in a significant
improvement in overall efficiency. The optimized tandem cell achieved a power conversion
efficiency (ā) of 42.281%, with an open-circuit voltage (Voc) of 1.3189 V, a short-circuit current
density (Jsc) of 34.498 mA/cm2, and a fill factor (FF) of 92.926%. These results confirm the high
potential of III-N tandem structures for high-efficiency photovoltaic applications
