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Effect of Doping on Screw Threading Dislocations in AlN and Their Role as Conductive Nanowires

Physica status solidi (c) vol: 9, pp: 484, 2012 .

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I. Belabbas, J. Chen and G. Nouet.

A new atomistic model for the threading screw dislocation core in wurtzite GaN

Computational Materials Science vol: 51, pp: 206 , 2011 .

URL :https://www.sciencedirect.com/science/article/abs/pii/S0927025611004435

J. Kioseoglou, E. Kalesaki, I. Belabbas, J. Chen , G. Nouet, H. Krimse, W. Neumann, Ph. Komninou and Th. Karakostas.

Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material

Journal of Applied Physics vol: 110 , pp: 053715, 2011 .

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I. Belabbas, A. Béré, J. Chen , S. Petit, M. A. Belkhir, P. Ruterana and G. Nouet.

Atomistic modelling of the mixed (a+c) dislocation cores in wurtzite GaN

Physical Review B vol: 75, pp: 1152201, 2007 .

I. Belabbas, G. Nouet and Ph.Komninou

Atomic core configurations of the a-screw basal dislocation in wurtzite GaN

Journal of crystal growth vol: 300, pp: 212, 2007 .

H. Lei, X.J. Jiang, J. Chen, I. Belabbas, P. Ruterana, and G. Nouet

InN clusters in InxGa1-xN quantum wells with Stillinger-Weber potential

Physica Status Solidi (c) vol: 4, pp: 2449, 2007 .

A. Béré, I. Belabbas, G. Nouet, P. Ruterana, J. Chen, G. Segda and J. Koulidiati

Ionization energy of GaN point defects

Physica Status Solidi (c) vol: 4, pp: 2593, 2007 .

I. Belabbas, A. Béré, J. Chen , P. Ruterana and G. Nouet.

Investigation of the atomic core structure of the (a+c) -mixed dislocation in wurtzite GaN

Physica Status Solidi (c) vol: 4, pp: 2940, 2007 .

M.A. Belkhir, S. Mahtout, I. Belabbas and M. Samah

Structure and electronic properties of medium-sized silicon clusters

Physica (E) vol: 31, pp: 86, 2006 .

I. Belabbas, A. Béré, J. Chen, S. Petit, M.A. Belkhir, P. Ruterana G. Nouet and Ph. Komninou

What does an (a+c) dislocation core look like in wurtzite GaN ?

Materials Research Society Symposium Proceeding Series vol: 892, pp: FF26-10, 2006 .

I. Belabbas, P. Ruterana, J. Chen and G. Nouet.

The atomic and electronic structure of dislocations in Ga based nitride semiconductors

Philosophical Magazine vol: 86, pp: 2241, 2006 .

I. Belabbas, J. Chen, M.A. Belkhir, P. Ruterana and G. Nouet.

New core configurations of the c-edge dislocation in wurtzite GaN

Physica status solidi (c) vol: 3, pp: 1733, 2006 .

S. Petit, A. Béré, J. Chen, I. Belabbas, P. Ruterana and G. Nouet

Atomic structure of dislocations in nitride semiconductors

2006 .

I. Belabbas, J. Chen, M.A. Belkhir, P. Ruterana and G. Nouet.

Ab-initio tight-binding study of the core structures of c-edge dislocation in wurtzite GaN

status solidi (a) vol: 203, pp: 2167, 2006 .

A. Béré, I. Belabbas, S. Petit, G. Nouet, P. Ruterana, J. Chen and J. Koulidiati

Atomic structure and relative stability of gallium and nitrogen interstitials in GaN [0001] grain boundaries

Physica status solidi (a) vol: 203, pp: 2176 , 2006 .

I. Belabbas, M.A. Belkhir, Y.H. Lee, A. Béré, P. Ruterana, J. Chen and G. Nouet

Local electronic structure of the threading screw dislocation in wurtzite GaN

Computational Materials Science vol: 37, pp: 410, 2006 .

I. Belabbas, G. Dimitrakopulos , J. Kioseoglou, A. Béré, J.Chen, Ph. Komninou and G. Nouet.

Energetics of the 30° Shockley partial dislocation in wurtzite GaN

Superlattices and Microstructures vol: 40, pp: 458 , 2006 .

I. Belabbas, J. Chen , P. Ruterana, G. Yu and G. Nouet.

Atomic core structure of 90° bent c-screw dislocation in wurtzite GaN

Rare metals vol: 25, pp: 1, 2006 .

I. Belabbas, M.A. Belkhir, Y.H. Lee, A. Béré, P. Ruterana, J. Chen and G. Nouet.

Atomic structure and energy of threading screw dislocation in wurtzite GaN

Physica Status Solidi (c) vol: 2, pp: 2492, 2005 .